| abstract |
Provided is a technique capable of suppressing the occurrence of cracks in a semiconductor chip separated into individual semiconductor chips when a semiconductor wafer having bump electrodes formed in each chip region is divided into individual semiconductor chips. A groove DT is formed on the back surface of a semiconductor wafer WF in a state where an adhesive tape AT is attached to the main surface of the semiconductor wafer WF. In order to form the groove DT on the back surface of the semiconductor wafer WF, a resist film is applied to the back surface of the semiconductor wafer WF, and then the resist film is patterned by using a photolithography technique. The patterning of the resist film is performed so that the resist film does not remain in the region where the trench DT is formed. Then, a trench DT is formed in a predetermined region of the semiconductor wafer WF by a dry etching technique using the patterned resist film as a mask. Specifically, the trench DT is formed in the vicinity region of the dicing line DL. [Selection] Figure 33 |