http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010258385-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_43607dc045975076640536340dfe7239 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 |
| filingDate | 2009-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cb4f50509cc5c52ec84a5f5650ba957 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6df26724f786cb61764540e9cc5f6b3f |
| publicationDate | 2010-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010258385-A |
| titleOfInvention | Silicon carbide semiconductor device and manufacturing method thereof |
| abstract | An object of the present invention is to improve dielectric strength and reduce on-resistance. An n-type buffer layer and an n − -type drift layer are stacked in this order on an n + -type 4H—SiC substrate, perpendicular to a first main surface, and planar in stripes. The 1st trench 4 is provided so that it may become. Further, the p-type base layer 5 and the n-type source layer 6 are laminated in this order, and are perpendicular to the first main surface side and have a planar shape in a stripe shape. The first trench 4 is formed on the surface of the first main surface. A second trench 7 is provided so as to intersect with. A gate electrode 9 is provided in the second trench 7 via a gate oxide film 8. The source electrode 11 is separated from the gate electrode 9 by the interlayer insulating film 10. The drain electrode 12 is provided on the entire surface of the second main surface of the epitaxial wafer. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013077761-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015015464-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102014200429-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012234908-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9647108-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015012294-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102012200236-B3 |
| priorityDate | 2009-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.