| abstract |
A focus ring attached to a lower electrode so as to cover the periphery of a substrate to be processed is arbitrarily, simply and efficiently heated independently of the electrode temperature. [Solution] In this plasma etching apparatus, when no processing gas is supplied to the processing space of the chamber 10, high frequency discharge does not occur and there is substantially no plasma generation load. In this case, the focus ring heating load becomes a substantial load for the high frequency power supply 28 in place of the plasma generation load, and the matching unit 32A operates to impedance match the load to the high frequency power supply 28. Here, the high-frequency propagation path from the susceptor 12 through the focus ring 36 and the dielectric 44 to the cylindrical support member 16 having the ground potential is used as a focus ring heating load. [Selection] Figure 1 |