| abstract |
The weight average molecular weight is 1,000 to 500,000, including a repeating unit in which a hydrogen atom of a carboxyl group is substituted with an acid labile group and a repeating unit having a group represented by the general formula (1). A positive resist material characterized in that a high molecular compound in a range is used as a base resin. (In the formula, X is —NH— or —S—). [Effect] The positive resist material of the present invention has a significantly high alkali dissolution rate contrast before and after exposure, high resolution, good pattern shape after exposure and line edge roughness, and especially acid diffusion. Speed can be suppressed. Therefore, it is possible to obtain a positive resist material, particularly a chemically amplified positive resist material, which is particularly suitable as a fine pattern forming material for VLSI manufacturing or a photomask, and a pattern forming material for EUV exposure. [Selection figure] None |