| abstract |
High sensitivity, high resolution, low line edge roughness, reduced residue after development, and suppression of swelling during development in measurement by the QCM method or the like. Accordingly, a positive resist material suitable as a fine pattern forming material particularly for VLSI manufacturing or photomask pattern production is provided. A polymer compound obtained by copolymerization of a (meth) acrylate monomer having an acid labile group and a (meth) acrylate monomer having a specific structure having a benzene condensed ring structure is contained. Positive resist material. [Selection figure] None |