| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00595
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7681 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2010-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fceb3224f35c4e47a4695531f312c27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99528e27714952b5e9f4dd7d16e580bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06c88a14a4def3d38bf9c156d5c8c050
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18fbd28fc2b8bccead4a6360111814b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8831c215d0dfb26fa2a9a7c9ab1a4a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39e7c6131be882095ac77783fd9e6661 |
| publicationDate |
2010-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2010219550-A |
| titleOfInvention |
Method for plasma etching organic antireflection coating |
| abstract |
The present invention provides a method for counteracting a change in critical dimension by etching an organic antireflection film in a lateral direction by using a gas containing O2 in dry etching. A semiconductor manufacturing process, wherein an organic anti-reflective coating provides selectivity to a lower layer and / or a lateral layer of an upper photoresist that maintains a critical dimension defined by the photoresist. Minimize directional etch rate. Therefore, SO2 is used as an etchant gas and He or Ar is used as a carrier gas for dry etching of the organic antireflection film. Optionally, other gases such as HBr may be added to this gas. This process is useful for etching contact or via openings of 0.25 μm or less when forming structures such as damascene structures. [Selection figure] None |
| priorityDate |
2001-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |