| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82cbc291d77c061ac9a216f86ec010a3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2009-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be085b928bbce24db3e1614e3e0a8b56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd668e58567655c7bb30a5b0dd4d0041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21025d6a6c3138c1550cb1ebf2e3ec20 |
| publicationDate |
2010-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2010165935-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
An oxide portion on a wiring surface formed in a semiconductor device having a damascene wiring structure is selectively removed. In manufacturing a semiconductor device having a damascene wiring structure, the wiring surface is reverse-sputtered with Xe plasma. According to the present invention, by performing reverse sputtering with a plasma gas of Xe, oxide portions and the like on the wiring surface can be selectively and efficiently removed, and an increase in contact resistance between the upper and lower wirings can be avoided in the damascene wiring structure. In addition, damage to the insulating film such as CF formed on the wiring can be suppressed, and variation in dielectric constant of the insulating film can also be suppressed. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013047375-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I503926-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5607243-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013251355-A |
| priorityDate |
2009-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |