| abstract |
A method for manufacturing a thin film transistor with low leakage current and high switching characteristics is provided. In a method for manufacturing a thin film transistor, a back channel portion is formed in the thin film transistor by etching using a resist mask, the resist mask is removed by peeling or the like, and further etching is performed on a surface layer portion of the back channel portion. Do. As a result, it is possible to remove a chemical component used for peeling or a resist mask residue, etc., present in the surface layer portion of the back channel portion, and reduce a leakage current. For further etching of the back channel part, it is preferable to use dry etching performed without bias with N 2 gas or CF 4 gas. [Selection] Figure 1 |