http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010087006-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e5c121269689cbab9b3a4548b15caf3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 |
| filingDate | 2008-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1266a79114c18ac615b8d259a6f7a3d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09aa9bd8ed027e9b866d9532b0154648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3022aa0b10073d80833ba7c6d2f25bfe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca0b6fbbf9cc7f7be59dacd688d2fbe5 |
| publicationDate | 2010-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010087006-A |
| titleOfInvention | Plasma processing apparatus and plasma processing method |
| abstract | Provided are a plasma processing apparatus and a plasma processing method capable of mirror-processing a silicon substrate without deteriorating the surface roughness of the silicon material when hydrogen gas is used as an etching gas. A plasma processing apparatus (10) is configured to bring a hydrogen plasma (6) generated between an electrode (11) close to a silicon substrate (2) in a hydrogen atmosphere and the silicon substrate (2) into contact with the surface of the silicon substrate (2). The substrate 2 is etched. A microwave oscillator 23 that outputs a microwave for generating the hydrogen plasma 6, and a hydrogen introduction line 12 that supplies hydrogen gas into the plasma through a pipe that forms the electrode 11 toward the processing surface of the silicon substrate 2. Prepare. The silicon substrate 2 is etched at an etching rate equal to or higher than the diffusion rate of hydrogen into the silicon substrate 2. [Selection] Figure 1 |
| priorityDate | 2008-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.