Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
filingDate |
2008-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b51dc0f3f77078dc9b8a157af843b191 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90079b613e2c49f93b68aeab8c625d15 |
publicationDate |
2010-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2010067638-A |
titleOfInvention |
Ruthenium film formation method |
abstract |
When a Ru film is formed on a dielectric film, a high quality ruthenium film can be formed by reducing the incubation time and generating nucleation at a high density. A method for forming a ruthenium film includes: generating plasma near a surface of a substrate to be processed carrying a dielectric film; modifying the surface of the dielectric film with the plasma; and modifying the dielectric film Supplying a ruthenium organometallic complex together with an inert carrier gas to the surface of the body film, and decomposing the organometallic complex, thereby forming a ruthenium film on the dielectric film. To do. [Selection] Figure 7 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107836034-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018516465-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7066929-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013194247-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107836034-B |
priorityDate |
2008-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |