http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010050446-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1333 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate | 2009-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4dfe70c54e4578cf1d99a1b4afb3fea8 |
| publicationDate | 2010-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010050446-A |
| titleOfInvention | Method for manufacturing SOI substrate |
| abstract | An object is to provide a method for regenerating a separated bond substrate after a semiconductor film is separated as a regenerated bond substrate that can be used for manufacturing an SOI substrate. An embrittlement layer is formed by adding ions at a certain depth from the surface of the bond substrate, the bond substrate is bonded to a glass substrate through an insulating film, and the bond substrate is bonded to the embrittlement layer. The substrate is separated into a semiconductor film bonded to a glass substrate through an insulating film and a separation bond substrate, and the separation bond substrate is subjected to first wet etching with a solution containing hydrofluoric acid, and the separation bond substrate is subjected to organic alkali. A second wet etching is performed with an aqueous solution, a gas containing halogen is added to the separation bond substrate in an oxidizing atmosphere, a thermal oxidation treatment is performed, an oxide film is formed on the surface of the separation bond substrate, and hydrofluoric acid is added to the oxide film. A third wet etching is performed with the solution containing the resultant, and the separation bond substrate is polished to form a regenerated bond substrate. [Selection] Figure 6 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013128047-A |
| priorityDate | 2008-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 74.