| abstract |
A plasma processing apparatus capable of increasing the processing range, performing uniform processing, and easily changing the design according to a processing target. SOLUTION: A plurality of through holes 2 into which a plasma generating gas G flows from an opening on one end side and an activated plasma generating gas G flows from an opening on the other end side, and each through hole 2 respectively. A reactor R comprising a flat insulating substrate 1 provided with a pair of electrodes 3 and 4 for generating discharge is provided. The pair of electrodes 3, 4 are formed in layers and are opposed to each other in the flow direction of the plasma generating gas G in the through hole 2, and both are embedded in the insulating substrate 1. In the flow direction of the plasma generating gas G in the through hole 2, the peripheral end portion of the downstream electrode 3 is projected outward from the peripheral end portion of the upstream electrode 4. [Selection] Figure 1 |