http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010027670-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_49308e8718b2bc5be941bc5b7a1d2443 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-465 |
| filingDate | 2008-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0bebce058e47b8b6a9c98f3340fa102 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9d4004fdd670f67034617c1a078cb54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a4b53e4c55023d6634cbca7179f8bce |
| publicationDate | 2010-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010027670-A |
| titleOfInvention | Semiconductor structure processing method |
| abstract | PROBLEM TO BE SOLVED: To provide a new wet etching method for a ZnO-based semiconductor structure. [Solution] a) a step of preparing a ZnO-based semiconductor structure whose surface is + C plane; b) a step of etching the surface of the ZnO-based semiconductor structure with a mixed solution of ammonium fluoride and hydrofluoric acid; and c) a step of b). Thereafter, the semiconductor structure is processed by a method including a step of etching the surface of the ZnO-based semiconductor structure with a mixed solution of hydrochloric acid and nitric acid. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012193069-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012195421-A |
| priorityDate | 2008-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.