Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B31-22 |
filingDate |
2008-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f8593d7af93020933bb85a5a668ed34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da0eba986927a2aa4c66476f66aeafe8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78974b6cc70576e4750b4695c316fed4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_adbc648b22c21e73fa9811ef52b83133 |
publicationDate |
2010-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2010016169-A |
titleOfInvention |
Epitaxial wafer and method for manufacturing epitaxial wafer |
abstract |
In an epitaxial wafer, an epitaxial wafer in which no epitaxial defect is formed in the epitaxial layer and having a strong gettering capability in the vicinity of the lower portion of the epitaxial layer, and a method for manufacturing the same are provided. An epitaxial wafer in which an epitaxial layer is formed on a silicon single crystal substrate, wherein the silicon single crystal substrate is doped with carbon during the growth of the silicon single crystal, and is 1.2 μm from the surface. A carbon ion implantation layer is formed by implanting carbon ions in a deep region, and the epitaxial layer is formed on the surface of the silicon single crystal substrate on which the carbon ion implantation layer is formed. Epitaxial wafer. [Selection] Figure 1 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170026669-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150066598-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113050044-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014099454-A |
priorityDate |
2008-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |