http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010016169-A

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filingDate 2008-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f8593d7af93020933bb85a5a668ed34
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publicationDate 2010-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010016169-A
titleOfInvention Epitaxial wafer and method for manufacturing epitaxial wafer
abstract In an epitaxial wafer, an epitaxial wafer in which no epitaxial defect is formed in the epitaxial layer and having a strong gettering capability in the vicinity of the lower portion of the epitaxial layer, and a method for manufacturing the same are provided. An epitaxial wafer in which an epitaxial layer is formed on a silicon single crystal substrate, wherein the silicon single crystal substrate is doped with carbon during the growth of the silicon single crystal, and is 1.2 μm from the surface. A carbon ion implantation layer is formed by implanting carbon ions in a deep region, and the epitaxial layer is formed on the surface of the silicon single crystal substrate on which the carbon ion implantation layer is formed. Epitaxial wafer. [Selection] Figure 1
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