http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007149799-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 |
| filingDate | 2005-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f8593d7af93020933bb85a5a668ed34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78974b6cc70576e4750b4695c316fed4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da0eba986927a2aa4c66476f66aeafe8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1d1a48242e9a1ef3582ab907c3f0246 |
| publicationDate | 2007-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007149799-A |
| titleOfInvention | Annealed wafer manufacturing method and annealed wafer |
| abstract | A method for manufacturing an annealed wafer having a thick defect-free layer on a wafer surface layer portion and having a strong gettering capability at a low cost is provided. At least, after carbon ions 14 are ion-implanted into a silicon single crystal wafer 11 doped with nitrogen so as to have a carbon ion concentration peak at a depth of 1.5 μm or more from the surface of the wafer, the ions are A method of manufacturing an annealed wafer, comprising subjecting the implanted wafer 11 to a heat treatment at a temperature of 1000 ° C. or higher and lower than a melting point of silicon in a non-oxidizing atmosphere for 1 second or longer. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010016169-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009075257-A1 |
| priorityDate | 2005-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.