http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009539267-A
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00571 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
filingDate | 2007-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2009-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2009539267-A |
titleOfInvention | Method for minimizing mask undercuts and notches in plasma processing systems |
abstract | A method of etching a silicon layer of a substrate disposed on a bottom electrode in a plasma processing chamber. The method includes performing a main etch step until at least 70 percent of the silicon layer is etched. The method further includes an overetching step that includes first, second, and third processing steps. The first processing prescription is used in the first processing step, the second processing prescription is used in the second processing step, and the third processing prescription is used in the third processing step. The second process recipe uses a second bottom bias voltage level applied to the bottom electrode, which is the first bottom bias voltage level used in the first process recipe and the third bottom bias voltage used in the third process recipe. Higher than level. The first, second and third processing steps are alternately performed a plurality of times until the silicon layer is completely etched. [Selection] Figure 2 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015511766-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017208548-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8896127-B2 |
priorityDate | 2006-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.