Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76243 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8249 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7834 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
filingDate |
2007-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2009-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2009533546-A |
titleOfInvention |
Selective deposition |
abstract |
A method for epitaxially forming a silicon-containing material on the surface of a substrate uses a halogen-containing gas as both an etching gas and a carrier gas through adjustment of the process chamber temperature and pressure. It is advantageous to use HCl as the halogen-containing gas. This is because the conversion of HCl from the carrier gas to the etching gas can be easily performed by adjusting the chamber pressure. [Selection] Figure 1 |
priorityDate |
2006-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |