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filingDate 2006-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2009-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009531535-A
titleOfInvention Apparatus and method for chemical vapor deposition processing of a wide range of multilayer atomic layers of thin films
abstract A wide range of high-speed atomic layer chemical vapor deposition processes where continuous and alternating flows of reactive and inert gases are directed from a plurality of composite nozzles located around the processing tank to a coaxially mounted rotating cylindrical susceptor Relates to an apparatus and a method for the above. A flexible substrate is mounted on a coaxial susceptor. In one embodiment, the treatment reactor has four composite injectors provided substantially perpendicular to the axis of rotation of the cylindrical susceptor. In another embodiment, the susceptor cross-section is a polygon having a plurality of substrates mounted on a small surface. The processing reactor can serve to process multiple layers of flexible or planar substrates with single atomic layer accuracy similar to the high speed chemical vapor deposition processing mode. The atomic layer chemical vapor processing of the present invention also provides for downstream capture of unused portions of injected reactive chemical precursors. [Selection figure] None
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