| abstract |
Disclosed are a method of forming a densified silicon oxynitride film having a tensile stress, and a semiconductor device including the densified silicon oxynitride film. The densified silicon oxynitride film deposits a porous SiNC: H film on the substrate in the LPCVD process and mixes oxygen into the SiNC: H film, thereby being higher than the porous SiNC: H film In order to form a densified SiONC: H film having a density, it can be formed by exposing the porous SiNC: H film to an oxygen-containing gas. The densified silicon oxynitride film can be included on a substrate including a semiconductor device. |