| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-115 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F212-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-32 |
| filingDate |
2006-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2009-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009508165-A |
| titleOfInvention |
Negative photoresist for silicon KOH etching without using silicon nitride |
| abstract |
Novel photoresists used in the manufacture of semiconductor devices and MEMS devices are provided. The primer layer preferably comprises silane dissolved or dispersed in a solvent system. The photoresist layer includes a copolymer prepared from styrene monomer, acrylonitrile monomer, and epoxy-containing monomer. The photoresist layer contains a photoacid generator and is preferably negative. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014118466-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010539288-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013035838-A |
| priorityDate |
2005-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |