| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
2006-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2009-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009503889-A |
| titleOfInvention |
Damage-free ashing process and system after low dielectric constant film etching |
| abstract |
A method for ashing a substrate after etching a feature in a low dielectric constant (low-k) layer is provided. The low-k layer may comprise an ultra low-k material or a porous low-k material. This process is configured to remove by-products while maintaining the critical dimension of the feature. This ashing process involves using a chemical reaction involving nitrogen and hydrogen together with a passivation chemical reaction involving oxygen, such as O 2 , CO, or CO 2 , or combinations thereof. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7296093-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020125223-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015523734-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013528928-A |
| priorityDate |
2005-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |