http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009253240-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2008-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10941373b6a864097266d70055b7c335 |
| publicationDate | 2009-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009253240-A |
| titleOfInvention | Method for manufacturing semiconductor substrate |
| abstract | In a method for manufacturing a semiconductor substrate in which a single crystal semiconductor layer is formed over a supporting substrate, a method is provided in which the single crystal semiconductor substrate is bonded and then regenerated for efficient and economical use. A conductive thin film having a tensile stress as a protective layer is formed on a first surface of a single crystal semiconductor substrate so that the second surface is warped in a convex shape. Next, ion species are implanted into the second surface of the single crystal semiconductor substrate to form an embrittlement layer in a region having a predetermined depth. Next, the single crystal semiconductor substrate and the supporting substrate are bonded to each other, and the single crystal semiconductor substrate separated from the single crystal semiconductor substrate is fixed to the supporting substrate by heating the single crystal semiconductor substrate, whereby the semiconductor substrate is manufactured. On the other hand, a regeneration process is performed on the second surface of the single crystal semiconductor substrate from which the semiconductor layer has been separated. In the regeneration treatment, an oxide film is formed by thermal oxidation treatment, and the oxide film is removed by hydrofluoric acid or the like. At this time, the film on the first surface is not reduced because the protective film is formed. [Selection] Figure 3 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016208059-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020077710-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013161966-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013187079-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018032877-A |
| priorityDate | 2008-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 66.