http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009187984-A

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00
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filingDate 2008-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_504141c248f62d92ab25a0465303e736
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7329d179945013227cc23b0ee2c6de0c
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publicationDate 2009-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009187984-A
titleOfInvention Polishing composition and polishing method using the same
abstract Disclosed is a polishing composition that can be more suitably used for polishing polysilicon and a polishing method using the same. The polishing composition of the present invention contains an anionic surfactant having monooxyethylene groups or polyoxyethylene groups and abrasive grains, and has a pH of 9-12. When the anionic surfactant in the polishing composition has a polyoxyethylene group, the number of repeating oxyethylene units of the polyoxyethylene group is preferably 2 to 8. As an anionic surfactant contained in polishing composition, what further has a phosphate group, a carboxy group, or a sulfo group can be used. The content of the anionic surfactant in the polishing composition is preferably 20 to 500 ppm. [Selection figure] None
priorityDate 2008-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 29.