| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2007-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_612a6c992f6e465b1726688655268375
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a4dcff2cee913584adf139758ab3ff9 |
| publicationDate |
2009-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009164198-A |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
A method of manufacturing a semiconductor device including a low dielectric constant film exhibiting good quality even when damaged during the manufacturing process is provided. A method of manufacturing a semiconductor device includes a step (a) of forming a low dielectric constant film 14 on a semiconductor substrate, a step (b) of forming a recess 20 in the low dielectric constant film 14, and a step (b). Thereafter, the step (c) of sequentially applying the step (c1) of applying the organic solution 4 to the low dielectric constant film 14 and the step (c2) of silylating the low dielectric constant film 14 using the silylation solution 5; After the step (c), a step (d) of forming at least one of a via plug and a metal wiring in the low dielectric constant film 14 by embedding a metal in the recess 20 is provided. By performing the step (c1) before the step (c2), the permeability of the silylated solution 5 to the low dielectric constant film 14 is improved. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012160549-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016017645-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022085449-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014521210-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011250750-A1 |
| priorityDate |
2007-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |