| abstract |
A method of manufacturing a semiconductor device capable of suppressing excessive etching of a sidewall of an insulating film damaged by etching and suppressing moisture absorption from the sidewall, and a chemical used in the method are provided. . A method for manufacturing a semiconductor device is provided by forming an insulating film 30 on a base material 20, providing a mask material 40 on the insulating film, etching the insulating film using the mask material, and etching the insulating film. A first treatment for removing the metal residue, a second treatment for hydrophobizing the sidewall of the insulating film formed by etching, and a third treatment for removing the silicon residue generated by etching the insulating film. It has. [Selection] Figure 6 |