http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009158610-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
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filingDate 2007-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9563e1c66a4ded14637a70f1c2bc08af
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publicationDate 2009-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009158610-A
titleOfInvention Insulation film damage recovery method
abstract [PROBLEMS] To recover a low dielectric constant insulating film that has been damaged by plasma by bringing it into contact with a recovery agent, so that the concentration of the recovery agent in the insulating film can be increased and the recovery process can proceed efficiently. A recovery processing method in which the characteristics of the subsequent insulating film are also improved is obtained. A substrate having an insulating film damaged by plasma processing is placed in a chamber, a recovery agent vapor is introduced into the chamber, and the inside of the chamber is heated to perform damage recovery processing on the insulating film. When performing, the temperature of the inner wall of the chamber 1 is set higher than the temperature of the substrate. The temperature of the chamber wall is preferably higher than the boiling point of the recovery agent, and it is also preferable to raise the temperature of the substrate 5 after introducing the recovery agent vapor into the chamber. [Selection] Figure 1
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