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publicationDate 2009-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009124109-A
titleOfInvention Method to prevent bending and bending of etch profile in high aspect ratio opening by treatment of polymer formed on opening side wall
abstract An etching method for forming a contact opening of a high aspect ratio in a dielectric layer is provided. A high-aspect-ratio contact opening is etched while a curved or bent etching profile is prevented by forming a thin film with high conductivity on the side wall of each contact opening. The conductivity of the thin film on the sidewall is enhanced by ion bombardment that occurs periodically during the etch process. [Selection] Figure 11
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