| abstract |
Provided is a semiconductor device in which a through electrode can be easily formed and the manufacturing yield can be improved. A first insulating layer having a first contact pad made of conductive polysilicon and a second insulating layer having a second contact pad are formed on a semiconductor silicon layer. Thereafter, via holes for through electrodes are formed until they reach at least the second contact pad through at least the semiconductor silicon layer and the first contact pad. [Selection] Figure 9 |