| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-515
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2008-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d4a11b74543043a42c05182c946b9a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83a635e97e26d5017dc4c4b8a17c1dc9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7e0e4469b65153e12d7642fee00b953
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98b6eff7f109c727e899f3faeecf82fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91fa4664c49b7f811727279271e53190
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_388d79f2f983e6aafd28690d0766ab9f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate |
2009-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009071291-A |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
An object is to provide a method for manufacturing a microcrystalline semiconductor film having favorable quality over a large-area substrate. In order to improve the quality of a microcrystalline semiconductor film formed at an early stage of film formation after forming a gate insulating film over a gate electrode, high-frequency power having different frequencies is supplied to generate glow discharge plasma, The lower part of the film in the vicinity of the gate insulating film interface is formed under the first film forming condition with a low film formation speed but good quality, and then the upper part of the film is deposited by changing to the second film forming condition with a high film forming speed. To do. Further, a buffer layer is stacked in contact with the microcrystalline semiconductor film. By applying high frequency power having different frequencies (different wavelengths) to the electrodes of the plasma CVD apparatus in an overlapping manner, the plasma density is increased and the plasma surface standing wave effect is made uniform. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011168656-A |
| priorityDate |
2007-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |