| abstract |
A polishing liquid for metal capable of obtaining a high polishing rate and suppressing a decrease in the polishing rate over time when polishing an object (wafer), and a chemical mechanical polishing method using the same To provide. An amino acid derivative represented by the following general formula (I), a heteroaromatic ring compound, an abrasive, an oxidizing agent, and a metal chelating agent are used for chemical mechanical polishing in a semiconductor device manufacturing process. in the metal-polishing liquid according to claim [general formula (I), R 1 represents an alkyl group having 1 to 4 carbon atoms, R 2 represents an alkylene group having 1 to 3 carbon atoms. ]. [Selection figure] None |