http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009021605-A

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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54da297c75cf50634cd2b78feb9a1272
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publicationDate 2009-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009021605-A
titleOfInvention Etching method using advanced patterning film in capacitively coupled high frequency plasma dielectric etching chamber
abstract A method of etching a wafer using an advanced patterning film (APF) to reduce curvature and improve the down / up ratio. A wafer having an APF layer is placed in a processing chamber having a power source operating at about 162 MHz, a processing gas is supplied to the chamber, source power is applied using a 162 MHz power source, and bias power is applied to the wafer. Including applying. The processing gas includes hydrogen gas (H 2 ), nitrogen gas (N 2 ), and carbon monoxide gas (CO). The ratio of H 2 : N 2 is about 1: 1. In addition, the wafer temperature is adjusted to improve the etching characteristics. [Selection] Figure 1
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