| abstract |
Polishing that is suitable for chemical mechanical polishing (CMP) of semiconductor components such as semiconductor substrates and interlayer insulating films, recording medium components and optical components, etc., and makes the surface of the object to be polished flat and the polishing rate can be increased. A composition for polishing and a polishing method are provided. SOLUTION: At least an abrasive, and (a) a monomer having a sulfonic acid (salt) group, a monomer having a carboxylic acid (salt) group, a monomer having a hydroxyl group, ethylene oxide or propylene oxide A monomer component comprising: a monomer having a skeleton derived from; and at least one monomer selected from the group of monomers having a nitrogen atom; and (b) vinylphosphonic acid (salt). A polishing composition comprising a polishing aid comprising a cleaning agent for semiconductor parts, the main component of which is a copolymer (salt) obtained by copolymerization. [Selection figure] None |