http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008518463-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2005-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008518463-A |
| titleOfInvention | Etching method including photoresist plasma conditioning process with hydrogen flow gradient |
| abstract | 【Task】 A method is provided for etching an element in an etch layer (208) through a photoresist mask (212) on a substrate. A substrate having an etching layer disposed under the photoresist mask is disposed in the processing chamber. Conditioning and conditioning the photoresist mask includes providing a conditioning gas comprising a flow rate of hydrogen-containing gas and a flow rate of at least one of fluorocarbon and hydrofluorocarbon to the processing chamber; and forming a conditioning plasma. And activating a conditioning gas to cure the photoresist (214). Stop the conditioning plasma. An etching plasma is provided to the processing chamber, and the etching plasma is different from the conditioning plasma. The element is etched into the etching layer (208) by the etching plasma. [Selection] Figure 5 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013070098-A |
| priorityDate | 2004-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.