| abstract |
A method of manufacturing an oxide thin film transistor device is provided that optimizes an etching process condition through a helicon plasma dry etching process using a specific etching gas and improves etching selectivity. In a method of manufacturing an oxide thin film transistor including a substrate, a gate electrode, a gate insulating film, a source and drain electrode, and a semiconductor thin film, the gate insulating film or the semiconductor thin film is subjected to a helicon plasma dry process using a specific etching gas. Includes steps to be patterned. [Selection] Figure 1 |