http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008270554-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
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filingDate 2007-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_782c6d7def3438093d582223a3c7a58e
publicationDate 2008-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008270554-A
titleOfInvention Semiconductor device, manufacturing method thereof, and manufacturing apparatus used therefor
abstract In a semiconductor device having a nitride-based compound semiconductor material, a semiconductor device capable of accurately controlling the formation depth of a hole for forming an electrode, a manufacturing method thereof, and a manufacturing apparatus used therefor provide. An electron transit layer is made of GaN. The electron supply layer is bonded to the electron transit layer 3, has a larger band gap energy than the electron transit layer 3, and is an Al x In y Ga 1-xy N layer (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). The multilayer structure includes flag layers 9 and 11 that are opaque to He—Cd laser light having a wavelength of 325 nm, and transparent layers 8, 10, and 12. The hole 13 passes through the flag layer 11 and reaches the layer 10, and the hole 14 passes through the flag layer 9 and reaches the layer 8. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010080493-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013252827-A
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Total number of triples: 25.