http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008192906-A

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filingDate 2007-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c46051b2bc024a6a4dc9229664efa57e
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publicationDate 2008-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008192906-A
titleOfInvention Plasma etching method, plasma etching apparatus, control program, and computer storage medium
abstract When an organic film is subjected to plasma etching through a mask made of a silicon-containing film formed thereon, it is possible to suppress the occurrence of bowing or undercut on the side wall portion of the organic film, which is favorable A plasma etching method and the like capable of obtaining a simple etching shape are provided. An organic film is etched by using a patterned SiON film as a mask to form an opening. For the plasma etching of the organic film 102, a processing gas composed of a mixed gas containing an oxygen (O) -containing gas, a rare gas, and a fluorocarbon gas (CF-based gas) is used. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014158005-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011134896-A
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Total number of triples: 32.