http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008187104-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2007-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f852af4610a4d18960afc26053b222da http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6649b81c3b891d150780c9651224fba5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4b484b4e84954ee8843e516d546ba4e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_124605f184cacf24d1ec01748a229026 |
| publicationDate | 2008-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008187104-A |
| titleOfInvention | Substrate processing method and substrate processing apparatus |
| abstract | Provided is a substrate processing method capable of selectively removing deposits generated in dry etching of silicon. A wafer W having a silicon substrate 40, a silicon nitride film 41 formed on the silicon substrate, and a hard mask 42 formed on the silicon nitride film 41 is generated from hydrogen bromide gas. The plasma 44 is dry etched to etch the silicon substrate 40 to form the trench 45, heat the wafer W to 200 ° C. or higher, and supply the hydrogen fluoride gas 31 and helium gas toward the wafer W. Then, oxygen radicals 32 are supplied into the trench 45 of the wafer W, dry etching is performed again on the wafer W by the plasma 44 to etch the silicon substrate 40, and the depth of the formed trench 45 is greater than a desired value. If it is larger, the process is terminated. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2014046083-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011151114-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013055023-A1 |
| priorityDate | 2007-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.