http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008187072-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 2007-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8f26d32571b1ccba3f393c6f93c5e32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fa39ae0c20fa3e3387fa680daf6ff91
publicationDate 2008-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008187072-A
titleOfInvention Semiconductor device manufacturing method and semiconductor device
abstract The productivity of a semiconductor device is improved. In a semiconductor device manufacturing method, a via hole and a wiring groove are formed in an interlayer insulating film formed on a lower layer wiring, and a diffusion prevention film is formed on an inner wall of the formed via hole and wiring groove. A seed layer was formed on the lower wiring and the diffusion prevention film while etching the diffusion prevention film deposited on the bottom of the metal layer, and the metal wiring was buried in the via hole and the wiring groove through the formed seed layer. According to such a method for manufacturing a semiconductor device, a semiconductor device having a diffusion barrier film and a barrier layer having a high barrier property and good adhesion can be manufactured, so that the productivity of the semiconductor device is improved. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011003687-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012002282-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9121094-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013187224-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011003881-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012009788-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010040772-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8580688-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9266146-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8324730-B2
priorityDate 2007-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000332108-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005277390-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006216787-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000012684-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419583196
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23964
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID416641266
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559021
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425762086
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23930
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID418354341
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559477
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23956
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23950
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23995
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559470
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23963
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID104727
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419558793

Total number of triples: 49.