Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate |
2007-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8f26d32571b1ccba3f393c6f93c5e32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fa39ae0c20fa3e3387fa680daf6ff91 |
publicationDate |
2008-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2008187072-A |
titleOfInvention |
Semiconductor device manufacturing method and semiconductor device |
abstract |
The productivity of a semiconductor device is improved. In a semiconductor device manufacturing method, a via hole and a wiring groove are formed in an interlayer insulating film formed on a lower layer wiring, and a diffusion prevention film is formed on an inner wall of the formed via hole and wiring groove. A seed layer was formed on the lower wiring and the diffusion prevention film while etching the diffusion prevention film deposited on the bottom of the metal layer, and the metal wiring was buried in the via hole and the wiring groove through the formed seed layer. According to such a method for manufacturing a semiconductor device, a semiconductor device having a diffusion barrier film and a barrier layer having a high barrier property and good adhesion can be manufactured, so that the productivity of the semiconductor device is improved. [Selection] Figure 1 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011003687-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012002282-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9121094-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013187224-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011003881-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012009788-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010040772-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8580688-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9266146-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8324730-B2 |
priorityDate |
2007-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |