| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2007-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5aee9713fd27f2441b8011d812b20158
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cca47edeeb17bff0e1dbb5054fb710bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b807493e507687a057cc14d8fcc759f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91d87275dbcb49dd842a901992a46df7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_833cf05c26e280b64a0e49ecbaab4fb0 |
| publicationDate |
2008-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008147675-A |
| titleOfInvention |
Method for forming electrical connection structure using non-uniform metal nitride film and connection structure manufactured by this method |
| abstract |
A method for forming an electrical connection structure of an integrated circuit element is provided. A first insulating layer is formed on a semiconductor substrate, and an opening is formed in the first insulating layer. The sidewall of the opening is lined with a first metal nitride layer 312 having a non-uniform nitrogen concentration. A conductive pattern 410 is formed inside the opening. A second metal nitride film 320 is formed between the conductive pattern and the first nitrided metal layer. [Selection] Figure 10 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8530349-B2 |
| priorityDate |
2006-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |