http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008141104-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3b0a3dbf8d6c9712d86ea1383fd5327 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2006-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b41ea43e341f1727ab05592ca204f971 |
| publicationDate | 2008-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008141104-A |
| titleOfInvention | Silicon electrode plate for plasma etching with excellent crack resistance |
| abstract | The present invention relates to a silicon electrode plate for plasma etching having excellent crack resistance, and particularly to a silicon electrode plate for plasma etching having excellent crack resistance that does not generate cracks even when plasma etching is performed at a high output. provide. A through-hole 5 formed in a direction parallel to the thickness direction of the silicon electrode plate from the plasma side of the silicon electrode plate, and a bolt hole 2 provided near the periphery of the silicon electrode plate are provided. In the silicon electrode plate 1 having, an elongated groove is provided around the bolt hole 2 so as to surround the bolt hole 2 and is separated from the bolt hole, and the elongated groove includes a through elongated groove 9, a bottomed elongated groove 91 or It may be a bottomed elongated groove 92. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010171244-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014227606-A |
| priorityDate | 2006-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.