| abstract |
An amorphous carbon film having a high elastic modulus and a low thermal shrinkage while keeping a relative dielectric constant low, a semiconductor device including the film, and a technique for forming an amorphous carbon film are provided. Since an amorphous carbon film is formed while controlling the amount of Si (silicon) added during film formation, the elastic modulus is high while keeping the relative dielectric constant at a low value of 3.3 or less, and An amorphous carbon film having a small heat shrinkage rate can be obtained. Accordingly, when this amorphous carbon film is used as a film constituting a semiconductor device, problems such as film peeling are suppressed, and as a result, the low dielectric constant and the barrier property against a metal such as Cu are utilized. be able to. [Selection] Figure 10 |