abstract |
In ArF lithography technology, a positive resist material that has a high resolution, a small line edge roughness, and a pattern with high rectangularity, and a pattern forming method thereof are provided. A resin component (A) that is soluble in an alkali developer by the action of an acid and a compound (B) that generates an acid in response to an actinic ray or radiation, the resin component (A) comprising: A positive resist material, which is a polymer compound having a repeating unit of the formula (1) and the compound (B) that generates an acid is a sulfonium salt compound. (R 1 is H, CH 3 or CF 3 , R 2 is a monovalent hydrocarbon group which may contain a hetero atom, m and n are 1 or 2, p is 0, 1 or 2, q is 0 or 1, a, b, c, and d are 0.01 or more and less than 1, and a + b + c + d = 1.) [Selection figure] None |