| abstract |
Compositions for removing photoresist, etch residues and BARC and methods comprising the same are provided. A composition for removing photoresist, ion-implanted photoresist, BARC and / or etch residue, comprising ammonium hydroxide and 2-aminobenzothiazole, residual water. Preferably 1-15% by weight tetramethylammonium hydroxide, 1-5% by weight tolyltriazole, 5-15% by weight propylene glycol, 1-10% by weight 2-aminobenzothiazole, 20-45% by weight Contains dipropylene glycol monomethyl ether and residual water. The present invention is a method for removing from a substrate a material selected from the group consisting of photoresist, etch residue, BARC, and combinations thereof, wherein the compound described above is used to remove material from the substrate. It is also a method comprising applying an object to a substrate. [Selection figure] None |