| abstract |
A step of forming an opening defined by an inner wall surface in an insulating film and a Cu-Mn alloy layer on the inner wall surface so that the Cu-Mn alloy layer is in direct contact with the inner wall surface. Covering the substrate, depositing a first Cu layer on the Cu-Mn alloy layer, depositing a second Cu layer on the first Cu layer, and opening the opening by the second Cu layer. A step of filling a portion, a step of forming a barrier layer on the inner wall surface by a reaction between Mn atoms in the Cu-Mn alloy layer and the insulating film, and an unreacted Mn in the Cu-Mn layer. In the method for removing the atoms from the surface of the second Cu layer via the first and second Cu layers, and the method for manufacturing the semiconductor device, the resistance of the formed Cu wiring layer is reduced. After the formation of the Cu-Mn alloy layer, there is provided a step of depositing the first Cu layer on the Cu-Mn alloy layer without being exposed to the atmosphere. [Selection] Figure 8 |