| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458 |
| filingDate |
2006-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f425cde69da0a8df5f79b28baa6b6c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f11137c73655e4098aafa681cbb4f039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_065cbe0137ac03cacb242b836d67a58a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb956cd483a27f796407f2e15f5565b8 |
| publicationDate |
2008-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008117850-A |
| titleOfInvention |
Wafer mounting electrode |
| abstract |
An object of the present invention is to provide a highly reliable wafer mounting electrode by preventing dielectric breakdown of helium gas as a heat transfer gas. An electrode main body 1 having a flow path for allowing a temperature adjusting medium to flow therethrough; Heat transfer gas penetrates through the electrode body into a gap formed by the dielectric film 2 formed on the wafer mounting surface of the electrode body and the dielectric film and the sample 3 placed on the dielectric film. In the wafer mounting electrode comprising a gas introduction path 10 to be supplied, and placing the wafer placed on the dielectric film in a vacuum vessel and performing plasma processing with plasma generated in the vacuum vessel, The portion of the gas introduction path that faces the wafer mounting surface is composed of a gas introduction pipe 5 having a plurality of cylindrical through holes, and the inner diameter of the through hole formed in the gas introduction pipe is the through hole. The value was set below a value at which no avalanche occurs due to collision of the secondary electrons emitted into the through-hole wall. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021106554-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7002014-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7149739-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019220555-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014054222-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010182763-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018186179-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017533582-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7303899-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019244631-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015170437-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020072261-A |
| priorityDate |
2006-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |