http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008108787-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate | 2006-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c6f54f75541448e4011872b968315ad http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27c36ea00b3f506de790c79c5858741b |
| publicationDate | 2008-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008108787-A |
| titleOfInvention | Nonvolatile semiconductor memory device and manufacturing method thereof |
| abstract | PROBLEM TO BE SOLVED: To increase the number of steps that a silicon oxide film formed on a side wall of a tungsten silicide film is swelled more than a silicon oxide film formed on a side wall of a polycrystalline silicon film at the time of gate electrode side wall oxidation. Prevent without. SOLUTION: Under a mixed gas condition of pressure 4 to 10 mmTorr, RF source power 200 to 400 W, bias power 100 to 200 W, CF 4 / Cl 2 / N 2 , the flow rate of CF 4 gas is 1 to 50 sccm, Cl 2 gas. The tungsten silicide film 6 is etched by setting the flow rate of 100 to 150 sccm and the flow rate of N 2 gas to 7 sccm or less, and the tungsten silicide film 6 is processed into a constricted shape in advance. However, even if more is oxidized than the first polycrystalline silicon film 3 and the second polycrystalline silicon film 5, a desired gate electrode shape can be obtained. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015056601-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8754464-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9378977-B2 |
| priorityDate | 2006-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.