http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008091736-A

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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e69926f761f65baaaba17a635cdcf9b6
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publicationDate 2008-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008091736-A
titleOfInvention Insulating film dry etching method
abstract 【Task】 In deep hole processing of an elliptical pattern, high-precision processing is performed in which the shortage of short diameter due to excessive deposition at the initial stage of etching is improved. [Solution] In an insulating film dry etching method in which a sample to be processed on which an elliptical pattern mask is formed is processed using a fluorocarbon gas, the etching step is divided into a first step and a second step from the start of etching. The polymer amount during etching is set to be smaller than that in the second step, and the first step time is controlled according to the ellipticity of the elliptic pattern (the ratio of the major axis dimension to the minor axis dimension). [Selection] Figure 4
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012195576-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102535095-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019096785-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020141033-A
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