| abstract |
There is provided a dry cleaning method capable of removing a source of dust generated on an inner wall of a semiconductor etching apparatus. A process gas comprising a combination of different gases including a fluorine-containing gas is supplied into a processing chamber in a multi-stage step, and an etching process is performed on the material to be etched, which is a laminated film containing Al, in a multi-stage step. A first cleaning process for removing a deposit containing a material to be etched that adheres to the processing chamber using a gas and an ion sputter of an internal component material in the processing chamber that adheres to the processing chamber are removed using a gas containing B. A second cleaning process is performed. [Selection] Figure 1 |