| abstract |
A low dielectric constant insulating film having high film strength and capable of preventing an increase in dielectric constant due to moisture absorption, a multilayer wiring apparatus capable of preventing a delay in device response speed and a decrease in reliability due to an increase in parasitic capacitance, and a method for manufacturing the same. Manufacturing a multilayer wiring device including forming an insulating film containing a substance having a Si—CH 3 bond and a Si—OH bond, and modifying the insulating film by irradiating the insulating film with ultraviolet rays through a filter. In the method, as a filter, the reduction rate of C concentration by X-ray photoelectron spectroscopy in the insulating film is 30% or less, and C—H bonds, O—H bonds, and Si—OH Si—O as the filter. A filter is used that gives a characteristic that the reduction rate of one or more bonds selected from the group consisting of bonds is 10% or more. Alternatively, Si—CH 2 —CH 2 —Si bonds and Si—CH 2 —Si bonds are formed in the insulating film by ultraviolet irradiation. [Selection figure] None |