http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008060565-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 2007-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_420eea136560344e42256db30bb2aa54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7638ad3d6cd36a18e30f6b9c4e5f2106
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publicationDate 2008-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008060565-A
titleOfInvention Organic layer etching with three-layer resist
abstract A method for forming a dual damascene feature in a porous low-k dielectric layer is provided. Vias are formed in a porous low-k dielectric layer. An organic planarization layer is formed on the porous low-k dielectric layer, and the organic layer fills the via. A photoresist mask is formed on the organic planarization layer. Providing a CO 2 containing etch gas, and from the CO 2 containing etching gas, generating a plasma for etching the organic planarization layer, by a process comprising, in organic planarization layer, features are etched. A trench is etched in the porous low-k dielectric layer using the organic planarization layer as a mask. The organic planarization layer is stripped off. [Selection] Figure 3
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011100765-A
priorityDate 2006-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005251901-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001284327-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006128543-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005079191-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005079192-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14917
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559562

Total number of triples: 25.